S4PM-M3/86A Vishay General Semiconductor
auf Bestellung 62 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 0.65 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.36 EUR |
| 1500+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details S4PM-M3/86A Vishay General Semiconductor
Description: DIODE GEN PURP 1KV 4A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.5 µs, Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Weitere Produktangebote S4PM-M3/86A nach Preis ab 0.42 EUR bis 0.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
S4PM-M3/86A | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1KV 4A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 1470 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| S4PM-M3/86A | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 4A; 2.5us; SMPC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 4A Reverse recovery time: 2.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 30pF Case: SMPC Max. forward voltage: 0.95V Max. forward impulse current: 100A Leakage current: 0.1mA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
|
|
S4PM-M3/86A | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 4A TO277A Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
|||||||||||
| S4PM-M3/86A | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 4A; 2.5us; SMPC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 4A Reverse recovery time: 2.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 30pF Case: SMPC Max. forward voltage: 0.95V Max. forward impulse current: 100A Leakage current: 0.1mA Kind of package: reel; tape |
Produkt ist nicht verfügbar |