S4PMHM3_A/H

S4PMHM3_A/H Vishay General Semiconductor - Diodes Division


s4pm.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1150 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
25+ 0.73 EUR
100+ 0.51 EUR
500+ 0.39 EUR
Mindestbestellmenge: 21
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Technische Details S4PMHM3_A/H Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 1KV 4A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.5 µs, Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote S4PMHM3_A/H nach Preis ab 0.26 EUR bis 0.87 EUR

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S4PMHM3_A/H S4PMHM3_A/H Hersteller : Vishay General Semiconductor s4pm.pdf Rectifiers 4A, 1000V, SMPC STD, SM Rect
auf Bestellung 2805 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.87 EUR
10+ 0.74 EUR
100+ 0.52 EUR
500+ 0.4 EUR
1000+ 0.33 EUR
1500+ 0.29 EUR
9000+ 0.26 EUR
Mindestbestellmenge: 4
S4PMHM3_A/H S4PMHM3_A/H Hersteller : Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 1KV 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
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