SCT2080KEGC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 1200V 40A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
Power Dissipation (Max): 262W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 40.29 EUR |
| 10+ | 35.8 EUR |
| 100+ | 31.31 EUR |
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Technische Details SCT2080KEGC11 Rohm Semiconductor
Description: MOSFET N-CH 1200V 40A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V, Power Dissipation (Max): 262W (Tc), Vgs(th) (Max) @ Id: 4V @ 4.4mA, Supplier Device Package: TO-247N, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V.
Weitere Produktangebote SCT2080KEGC11 nach Preis ab 31.84 EUR bis 40.96 EUR
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SCT2080KEGC11 | Hersteller : ROHM Semiconductor |
MOSFET SILICON CARBIDE |
auf Bestellung 252 Stücke: Lieferzeit 10-14 Tag (e) |
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| SCT2080KEGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 80A; 262W Technology: SiC Mounting: THT Power dissipation: 262W Case: TO247 Kind of package: tube Drain-source voltage: 1.2kV Drain current: 40A On-state resistance: 0.117Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 106nC Kind of channel: enhanced Gate-source voltage: -6...22V Pulsed drain current: 80A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SCT2080KEGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 80A; 262W Technology: SiC Mounting: THT Power dissipation: 262W Case: TO247 Kind of package: tube Drain-source voltage: 1.2kV Drain current: 40A On-state resistance: 0.117Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 106nC Kind of channel: enhanced Gate-source voltage: -6...22V Pulsed drain current: 80A |
Produkt ist nicht verfügbar |