SCT20N120AG STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 153W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 153W
Case: HIP247™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Application: automotive industry
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 18.16 EUR |
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Technische Details SCT20N120AG STMicroelectronics
Description: SICFET N-CH 1200V 20A HIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 200°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V, Power Dissipation (Max): 153W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: HiP247™, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote SCT20N120AG nach Preis ab 18.16 EUR bis 32.14 EUR
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SCT20N120AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 153W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Pulsed drain current: 45A Power dissipation: 153W Case: HIP247™ On-state resistance: 0.22Ω Mounting: THT Gate charge: 45nC Kind of package: tube Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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SCT20N120AG | Hersteller : STMicroelectronics |
MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm typ Tj = 15 |
auf Bestellung 600 Stücke: Lieferzeit 297-301 Tag (e) |
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SCT20N120AG | Hersteller : STMicroelectronics |
Description: SICFET N-CH 1200V 20A HIP247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V Power Dissipation (Max): 153W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: HiP247™ Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V Qualification: AEC-Q101 |
auf Bestellung 42 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT20N120AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 20A Automotive 3-Pin HIP-247 Tube |
Produkt ist nicht verfügbar |
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SCT20N120AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 20A Automotive AEC-Q101 3-Pin HIP-247 Tube |
Produkt ist nicht verfügbar |
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| SCT20N120AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH SiC 1.2KV 20A Automotive 3-Pin HIP-247 Tube |
Produkt ist nicht verfügbar |