SCT2160KEGC11 Rohm Semiconductor
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 21.31 EUR |
| 25+ | 19.6 EUR |
| 50+ | 18.12 EUR |
| 100+ | 16.81 EUR |
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Technische Details SCT2160KEGC11 Rohm Semiconductor
Description: 1200V, 22A, THD, SILICON-CARBIDE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V, Power Dissipation (Max): 165W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: TO-247N, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V.
Weitere Produktangebote SCT2160KEGC11 nach Preis ab 12.24 EUR bis 23.65 EUR
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SCT2160KEGC11 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH SiC 1.2KV 22A 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT2160KEGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 22A; Idm: 55A; 165W Type of transistor: N-MOSFET Technology: SiC Mounting: THT Case: TO247 Kind of package: tube On-state resistance: 208mΩ Power dissipation: 165W Drain-source voltage: 1.2kV Drain current: 22A Polarisation: unipolar Gate charge: 62nC Kind of channel: enhanced Gate-source voltage: -6...22V Pulsed drain current: 55A Anzahl je Verpackung: 1 Stücke |
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| SCT2160KEGC11 | Hersteller : Rohm Semiconductor |
Description: 1200V, 22A, THD, SILICON-CARBIDE Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-247N Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V |
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SCT2160KEGC11 | Hersteller : ROHM Semiconductor |
MOSFET |
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| SCT2160KEGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 22A; Idm: 55A; 165W Type of transistor: N-MOSFET Technology: SiC Mounting: THT Case: TO247 Kind of package: tube On-state resistance: 208mΩ Power dissipation: 165W Drain-source voltage: 1.2kV Drain current: 22A Polarisation: unipolar Gate charge: 62nC Kind of channel: enhanced Gate-source voltage: -6...22V Pulsed drain current: 55A |
Produkt ist nicht verfügbar |