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SGB15N60HSATMA1

SGB15N60HSATMA1 Infineon Technologies


INFNS10027-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: IGBT
Packaging: Bulk
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Technische Details SGB15N60HSATMA1 Infineon Technologies

Description: IGBT 600V 27A 138W TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Td (on/off) @ 25°C: 13ns/209ns, Switching Energy: 530µJ, Test Condition: 400V, 15A, 23Ohm, 15V, Gate Charge: 80 nC, Current - Collector (Ic) (Max): 27 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 138 W.

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SGB15N60HSATMA1 SGB15N60HSATMA1 Hersteller : Infineon Technologies SGB15N60HS.pdf Description: IGBT 600V 27A 138W TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 13ns/209ns
Switching Energy: 530µJ
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 138 W
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