SGW10N60RUFDTM
Hersteller: auf Bestellung 799 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SGW10N60RUFDTM
Description: IGBT 600V 16A 75W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 15ns/36ns, Switching Energy: 141µJ (on), 215µJ (off), Test Condition: 300V, 10A, 20Ohm, 15V, Gate Charge: 30 nC, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 75 W.
Weitere Produktangebote SGW10N60RUFDTM
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SGW10N60RUFDTM | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 16A 75000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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SGW10N60RUFDTM | Hersteller : onsemi |
Description: IGBT 600V 16A 75W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 15ns/36ns Switching Energy: 141µJ (on), 215µJ (off) Test Condition: 300V, 10A, 20Ohm, 15V Gate Charge: 30 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 75 W |
Produkt ist nicht verfügbar |