SH8K11GZETB

SH8K11GZETB ROHM SEMICONDUCTOR


Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 14A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 140mΩ
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
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Technische Details SH8K11GZETB ROHM SEMICONDUCTOR

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 14A; 2W; SOP8, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 3.5A, Pulsed drain current: 14A, Power dissipation: 2W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 140mΩ, Mounting: SMD, Gate charge: 1.9nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate.

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SH8K11GZETB SH8K11GZETB Hersteller : ROHM SEMICONDUCTOR Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 14A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 140mΩ
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar