SH8K26GZ0TB1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: 40V NCH+NCH POWER MOSFET : MIDDL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: 40V NCH+NCH POWER MOSFET : MIDDL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.99 EUR |
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Technische Details SH8K26GZ0TB1 Rohm Semiconductor
Description: ROHM - SH8K26GZ0TB1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 6 A, 6 A, 0.027 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 6A, Dauer-Drainstrom Id, p-Kanal: 6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 40V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 6A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.027ohm, Verlustleistung, p-Kanal: 2W, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Bauform - Transistor: SOP, Anzahl der Pins: 8Pin(s), Produktpalette: PW Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.027ohm, productTraceability: No, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote SH8K26GZ0TB1 nach Preis ab 0.81 EUR bis 2.32 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SH8K26GZ0TB1 | Hersteller : ROHM Semiconductor | MOSFET LOW POWER MOSFET |
auf Bestellung 14967 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8K26GZ0TB1 | Hersteller : Rohm Semiconductor |
Description: 40V NCH+NCH POWER MOSFET : MIDDL Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
auf Bestellung 4986 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8K26GZ0TB1 | Hersteller : ROHM |
Description: ROHM - SH8K26GZ0TB1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 6 A, 6 A, 0.027 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.027ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: PW Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.027ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 2520 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8K26GZ0TB1 | Hersteller : ROHM |
Description: ROHM - SH8K26GZ0TB1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 6 A, 6 A, 0.027 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 6A Dauer-Drainstrom Id, p-Kanal: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.027ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: PW Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.027ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 2520 Stücke: Lieferzeit 14-21 Tag (e) |