SH8K32GZETB Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.13 EUR |
| 5000+ | 1.09 EUR |
| 12500+ | 1.06 EUR |
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Technische Details SH8K32GZETB Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP.
Weitere Produktangebote SH8K32GZETB nach Preis ab 0.67 EUR bis 2.52 EUR
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SH8K32GZETB | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH Si 60V 4.5A 8-Pin SOP T/R |
auf Bestellung 1850 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8K32GZETB | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH Si 60V 4.5A 8-Pin SOP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8K32GZETB | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH Si 60V 4.5A 8-Pin SOP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8K32GZETB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 4.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
auf Bestellung 17490 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8K32GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Pulsed drain current: 18A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SH8K32GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Pulsed drain current: 18A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |