SH8K52GZETB

SH8K52GZETB Rohm Semiconductor


datasheet?p=SH8K52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
auf Bestellung 7500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.81 EUR
5000+ 0.77 EUR
Mindestbestellmenge: 2500
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Technische Details SH8K52GZETB Rohm Semiconductor

Description: MOSFET 2N-CH 100V 3A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Not For New Designs.

Weitere Produktangebote SH8K52GZETB nach Preis ab 0.78 EUR bis 1.97 EUR

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SH8K52GZETB SH8K52GZETB Hersteller : Rohm Semiconductor datasheet?p=SH8K52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 100V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
auf Bestellung 9895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.95 EUR
12+ 1.6 EUR
100+ 1.24 EUR
500+ 1.05 EUR
1000+ 0.86 EUR
Mindestbestellmenge: 10
SH8K52GZETB SH8K52GZETB Hersteller : ROHM Semiconductor datasheet?p=SH8K52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET 100V Nch+Nch Power MOSFET. SH8K52 is a Power MOSFET with Low on-resistance, suitable for switching.
auf Bestellung 1994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.97 EUR
10+ 1.62 EUR
100+ 1.26 EUR
500+ 1.07 EUR
1000+ 0.87 EUR
2500+ 0.82 EUR
5000+ 0.78 EUR
Mindestbestellmenge: 2
SH8K52GZETB SH8K52GZETB Hersteller : ROHM SEMICONDUCTOR datasheet?p=SH8K52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3A; Idm: 12A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SH8K52GZETB SH8K52GZETB Hersteller : ROHM SEMICONDUCTOR datasheet?p=SH8K52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3A; Idm: 12A; 2W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar