SH8M51GZETB ROHM Semiconductor
Hersteller: ROHM SemiconductorMOSFET 4V Drive Nch+Pch MOSFET. SH8M51 is a Power MOSFET with Low on-resistance, suitable for switching.
auf Bestellung 2259 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.66 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.17 EUR |
| 2500+ | 1.1 EUR |
| 5000+ | 1.05 EUR |
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Technische Details SH8M51GZETB ROHM Semiconductor
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 3/-2.5A; Idm: 10÷12A, Type of transistor: N/P-MOSFET, Polarisation: unipolar, Drain-source voltage: 100/-100V, Drain current: 3/-2.5A, Pulsed drain current: 10...12A, Power dissipation: 2W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 190/340mΩ, Mounting: SMD, Gate charge: 8.5/12.5nC, Kind of package: reel; tape, Kind of channel: enhanced.
Weitere Produktangebote SH8M51GZETB
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SH8M51GZETB | Hersteller : Rohm Semiconductor |
Description: 4V DRIVE NCH+PCH MOSFET. SH8M51 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8M51GZETB | Hersteller : Rohm Semiconductor |
Description: 4V DRIVE NCH+PCH MOSFET. SH8M51 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8M51GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 3/-2.5A; Idm: 10÷12A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 3/-2.5A Pulsed drain current: 10...12A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 190/340mΩ Mounting: SMD Gate charge: 8.5/12.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SH8M51GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 3/-2.5A; Idm: 10÷12A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 3/-2.5A Pulsed drain current: 10...12A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 190/340mΩ Mounting: SMD Gate charge: 8.5/12.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |