SH8MB5TB1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 40V DUAL NCH+PCH, SOP8, POWER MO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V, 2870pF @ 20V
Rds On (Max) @ Id, Vgs: 19.4mOhm @ 8.5A, 10V, 16.8mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 20V, 51nC @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.26 EUR |
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Technische Details SH8MB5TB1 Rohm Semiconductor
Description: ROHM - SH8MB5TB1 - Dual-MOSFET, n- und p-Kanal, 40 V, 40 V, 8.5 A, 8.5 A, 0.0149 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 8.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 40V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 8.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0149ohm, Verlustleistung, p-Kanal: 2W, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Bauform - Transistor: SOP, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0149ohm, productTraceability: No, Kanaltyp: n- und p-Kanal, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote SH8MB5TB1 nach Preis ab 1.17 EUR bis 2.8 EUR
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SH8MB5TB1 | Hersteller : ROHM Semiconductor |
MOSFET 40V Dual Nch+Pch, SOP8, Power MOSFET |
auf Bestellung 19264 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8MB5TB1 | Hersteller : Rohm Semiconductor |
Description: 40V DUAL NCH+PCH, SOP8, POWER MO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V, 2870pF @ 20V Rds On (Max) @ Id, Vgs: 19.4mOhm @ 8.5A, 10V, 16.8mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 20V, 51nC @ 20V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
auf Bestellung 4330 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8MB5TB1 | Hersteller : ROHM |
Description: ROHM - SH8MB5TB1 - Dual-MOSFET, n- und p-Kanal, 40 V, 40 V, 8.5 A, 8.5 A, 0.0149 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0149ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0149ohm productTraceability: No Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C |
auf Bestellung 11846 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8MB5TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 8.5A; Idm: 34A; 2W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 8.5A Pulsed drain current: 34A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 26/21mΩ Mounting: SMD Gate charge: 10.6/51nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SH8MB5TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 8.5A; Idm: 34A; 2W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 8.5A Pulsed drain current: 34A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 26/21mΩ Mounting: SMD Gate charge: 10.6/51nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |