SI7115DN-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.48 EUR |
| 6000+ | 1.43 EUR |
| 9000+ | 1.38 EUR |
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Technische Details SI7115DN-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc), Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V.
Weitere Produktangebote SI7115DN-T1-E3 nach Preis ab 1.43 EUR bis 3.29 EUR
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SI7115DN-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET -150V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 8832 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7115DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 150V 8.9A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc) Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V |
auf Bestellung 12016 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7115DN-T1-E3 | Hersteller : VISHAY |
09+ |
auf Bestellung 89 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7115DN-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -8.9A; Idm: -15A Polarisation: unipolar Case: PowerPAK® 1212-8 Kind of package: reel; tape Drain-source voltage: -150V Drain current: -8.9A On-state resistance: 315mΩ Type of transistor: P-MOSFET Power dissipation: 52W Mounting: SMD Gate charge: 42nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -15A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7115DN-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -8.9A; Idm: -15A Polarisation: unipolar Case: PowerPAK® 1212-8 Kind of package: reel; tape Drain-source voltage: -150V Drain current: -8.9A On-state resistance: 315mΩ Type of transistor: P-MOSFET Power dissipation: 52W Mounting: SMD Gate charge: 42nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -15A |
Produkt ist nicht verfügbar |