auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIA433EDJ-T1-GE3 Vishay
Description: MOSFET P-CH 20V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 7.6A, 4.5V, Power Dissipation (Max): 3.5W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 8 V.
Weitere Produktangebote SIA433EDJ-T1-GE3 nach Preis ab 0.28 EUR bis 1.11 EUR
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SIA433EDJ-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 20V 12A PPAK SC70-6Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7.6A, 4.5V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 8 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA433EDJ-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 T/R |
auf Bestellung 1640 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA433EDJ-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 T/R |
auf Bestellung 1640 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA433EDJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 12A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7.6A, 4.5V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 8 V |
auf Bestellung 8146 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA433EDJ-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -20V Vds 12V Vgs PowerPAK SC-70 |
auf Bestellung 9165 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA433EDJ-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 T/R |
Produkt ist nicht verfügbar |
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SIA433EDJ-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 T/R |
Produkt ist nicht verfügbar |
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| SIA433EDJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -12A Pulsed drain current: -50A Power dissipation: 19W Gate-source voltage: ±12V On-state resistance: 65mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIA433EDJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -12A Pulsed drain current: -50A Power dissipation: 19W Gate-source voltage: ±12V On-state resistance: 65mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |