SiA469DJ-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
auf Bestellung 165000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.16 EUR |
6000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SiA469DJ-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5A, 10V, Power Dissipation (Max): 15.6W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Single, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V.
Weitere Produktangebote SiA469DJ-T1-GE3 nach Preis ab 0.17 EUR bis 3.2 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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SIA469DJ-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 8.8A 6-Pin PowerPAK SC-70 EP T/R |
auf Bestellung 5695 Stücke: Lieferzeit 14-21 Tag (e) |
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SiA469DJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 12A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5A, 10V Power Dissipation (Max): 15.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Single Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V |
auf Bestellung 167506 Stücke: Lieferzeit 10-14 Tag (e) |
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SiA469DJ-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET -30V Vds 20V Vgs PowerPAK SC-70 |
auf Bestellung 153660 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA469DJ-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIA469DJ-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 12 A, 0.021 ohm, PowerPAK SC70, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 12 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 15.6 Bauform - Transistor: PowerPAK SC70 Anzahl der Pins: 6 Produktpalette: TrenchFET Wandlerpolarität: p-Kanal Betriebswiderstand, Rds(on): 0.021 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 3 SVHC: No SVHC (19-Jan-2021) |
auf Bestellung 2600 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA469DJ-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIA469DJ-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 12 A, 0.021 ohm, PowerPAK SC-70, Oberflächenmontage tariffCode: 85412900 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Verlustleistung: 15.6 Bauform - Transistor: PowerPAK SC-70 productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Drain-Source-Durchgangswiderstand: 0.021 SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 2600 Stücke: Lieferzeit 14-21 Tag (e) |
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SiA469DJ-T1-GE3 | Hersteller : VISHAY | SIA469DJ-T1-GE3 SMD P channel transistors |
auf Bestellung 2742 Stücke: Lieferzeit 7-14 Tag (e) |
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SiA469DJ-T1-GE3 | Hersteller : Vishay Siliconix | P-канальний ПТ; Udss, В = 30; Id = 12; Ciss, пФ @ Uds, В = 1020 @ 15; Qg, нКл = 15; Rds = 26,5 мОм; Ugs(th) = 3 В; Р, Вт = 15,6; Тексп, °C = -55...+150; Тип монт. = smd; SC70-6L |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA469DJ-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 8.8A 6-Pin PowerPAK SC-70 EP T/R |
Produkt ist nicht verfügbar |
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SIA469DJ-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 8.8A 6-Pin PowerPAK SC-70 EP T/R |
Produkt ist nicht verfügbar |
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SIA469DJ-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 8.8A 6-Pin PowerPAK SC-70 EP T/R |
Produkt ist nicht verfügbar |