SIA472EDJ-T1-GE3 VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A
Power dissipation: 19.2W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 26.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 36nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A
Power dissipation: 19.2W
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 26.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 36nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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Technische Details SIA472EDJ-T1-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A, Power dissipation: 19.2W, Mounting: SMD, Kind of package: reel; tape, Drain-source voltage: 30V, Drain current: 12A, On-state resistance: 26.3mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 36nC, Technology: TrenchFET®, Kind of channel: enhanced, Gate-source voltage: ±12V, Pulsed drain current: 30A, Anzahl je Verpackung: 3000 Stücke.
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| SIA472EDJ-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A Power dissipation: 19.2W Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 12A On-state resistance: 26.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 36nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A |
Produkt ist nicht verfügbar |