SIA533EDJ-T1-GE3 Vishay Semiconductors
auf Bestellung 123583 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 0.98 EUR |
| 10+ | 0.84 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.38 EUR |
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Technische Details SIA533EDJ-T1-GE3 Vishay Semiconductors
Description: MOSFET N/P-CH 12V 4.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7.8W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 6V, Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active.
Weitere Produktangebote SIA533EDJ-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIA533EDJ-T1-GE3 | Hersteller : VISHAY |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET Type of transistor: N/P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIA533EDJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 12V 4.5A SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 6V Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
Produkt ist nicht verfügbar |
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SIA533EDJ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 12V 4.5A SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 6V Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
Produkt ist nicht verfügbar |
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| SIA533EDJ-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET Type of transistor: N/P-MOSFET |
Produkt ist nicht verfügbar |