SIHA120N60E-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
Description: MOSFET N-CH 600V 25A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.2 EUR |
10+ | 6.89 EUR |
100+ | 5.57 EUR |
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Technische Details SIHA120N60E-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 25A TO220, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V.
Weitere Produktangebote SIHA120N60E-GE3 nach Preis ab 4.26 EUR bis 8.27 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHA120N60E-GE3 | Hersteller : Vishay Semiconductors | MOSFET 650V Vds; 30V Vgs TO-220 |
auf Bestellung 354 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHA120N60E-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab ) TO-220FP |
Produkt ist nicht verfügbar |
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SIHA120N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 66A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHA120N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 66A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |