SIHB080N60E-GE3 Vishay Semiconductors
auf Bestellung 4460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 8.54 EUR |
10+ | 7.18 EUR |
25+ | 6.78 EUR |
100+ | 5.81 EUR |
250+ | 5.49 EUR |
500+ | 5.19 EUR |
1000+ | 4.38 EUR |
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Technische Details SIHB080N60E-GE3 Vishay Semiconductors
Description: E SERIES POWER MOSFET D2PAK (TO-, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V.
Weitere Produktangebote SIHB080N60E-GE3 nach Preis ab 4.45 EUR bis 8.61 EUR
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SIHB080N60E-GE3 | Hersteller : Vishay Siliconix |
Description: E SERIES POWER MOSFET D2PAK (TO- Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V |
auf Bestellung 1722 Stücke: Lieferzeit 10-14 Tag (e) |
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