SIHB100N60E-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 30A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.94 EUR |
| 50+ | 6.28 EUR |
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Technische Details SIHB100N60E-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 30A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V.
Weitere Produktangebote SIHB100N60E-GE3 nach Preis ab 4.12 EUR bis 7.97 EUR
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SIHB100N60E-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 650V Vds; 30V Vgs D2PAK (TO-263) |
auf Bestellung 1268 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHB100N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 30A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| SIHB100N60E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 73A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 73A Power dissipation: 208W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHB100N60E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 73A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 73A Power dissipation: 208W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |