SIS990DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 12.1A PPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V
Rds On (Max) @ Id, Vgs: 85mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Description: MOSFET 2N-CH 100V 12.1A PPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V
Rds On (Max) @ Id, Vgs: 85mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.59 EUR |
6000+ | 0.56 EUR |
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Technische Details SIS990DN-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 100V 12.1A PPAK1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 25W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 12.1A, Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V, Rds On (Max) @ Id, Vgs: 85mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual, Part Status: Active.
Weitere Produktangebote SIS990DN-T1-GE3 nach Preis ab 0.57 EUR bis 1.46 EUR
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SIS990DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 100V 12.1A PPAK1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 25W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.1A Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V Rds On (Max) @ Id, Vgs: 85mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
auf Bestellung 13969 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS990DN-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 18830 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS990DN-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 27791 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS990DN-T1-GE3 | Hersteller : VISHAY | SIS990DN-T1-GE3 Multi channel transistors |
Produkt ist nicht verfügbar |