auf Bestellung 1895 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 218+ | 0.71 EUR |
| 220+ | 0.68 EUR |
| 222+ | 0.65 EUR |
| 250+ | 0.62 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.56 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIZ348DT-T1-GE3 Vishay
Description: MOSFET 2N-CH 30V 18A/30A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.7W (Ta), 16.7W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-Power33 (3x3).
Weitere Produktangebote SIZ348DT-T1-GE3 nach Preis ab 0.61 EUR bis 1.99 EUR
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SIZ348DT-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 18A/30A 8PWR33Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ348DT-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3 |
auf Bestellung 4761 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ348DT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 18A 8-Pin PowerPAIR EP T/R |
auf Bestellung 1895 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ348DT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 18A/30A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.7W (Ta), 16.7W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZ348DT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 18A 8-Pin PowerPAIR EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIZ348DT-T1-GE3 | Hersteller : VISHAY |
SIZ348DT-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SIZ348DT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 18A 8-Pin PowerPAIR EP T/R |
Produkt ist nicht verfügbar |
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SIZ348DT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 18A 8-Pin PowerPAIR EP T/R |
Produkt ist nicht verfügbar |