Produkte > SEMIKRON DANFOSS > SKM200GBD126D 22891102
SKM200GBD126D 22891102

SKM200GBD126D 22891102 SEMIKRON DANFOSS


SKM200GBD126D-DTE.pdf Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Application: for UPS; frequency changer; Inverter; photovoltaics
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 186A
Pulsed collector current: 414A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details SKM200GBD126D 22891102 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV, Application: for UPS; frequency changer; Inverter; photovoltaics, Type of module: IGBT, Topology: IGBT half-bridge, Case: SEMITRANS3, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 186A, Pulsed collector current: 414A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote SKM200GBD126D 22891102

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SKM200GBD126D 22891102 SKM200GBD126D 22891102 Hersteller : SEMIKRON DANFOSS SKM200GBD126D-DTE.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Application: for UPS; frequency changer; Inverter; photovoltaics
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 186A
Pulsed collector current: 414A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar