SKM200GBD126D 22891102 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Application: for UPS; frequency changer; Inverter; photovoltaics
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 186A
Pulsed collector current: 414A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Application: for UPS; frequency changer; Inverter; photovoltaics
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 186A
Pulsed collector current: 414A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details SKM200GBD126D 22891102 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV, Application: for UPS; frequency changer; Inverter; photovoltaics, Type of module: IGBT, Topology: IGBT half-bridge, Case: SEMITRANS3, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 186A, Pulsed collector current: 414A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SKM200GBD126D 22891102
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
SKM200GBD126D 22891102 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV Application: for UPS; frequency changer; Inverter; photovoltaics Type of module: IGBT Topology: IGBT half-bridge Case: SEMITRANS3 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 186A Pulsed collector current: 414A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |