SPA07N60CFDXKSA1 Infineon Technologies

Description: MOSFET N-CH 650V 6.6A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc), Rds On (Max) @ Id, Vgs: 700mOhm @ 4.6A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 5V @ 300µA, Supplier Device Package: PG-TO220-3-31, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V.