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SPD07N60C3 Infineon

SP%28D%2CU%2907N60C3_Rev2.7_07-31-13.pdf Hersteller: Infineon
N-MOSFET 7.3A 650V 83W 0.60Ω SPD07N60C3 TSPD07n60c3
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Lieferzeit 7-14 Tag (e)
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20+2.34 EUR
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Technische Details SPD07N60C3 Infineon

Description: MOSFET N-CH 600V 7.3A TO252-3, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 350µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V.

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SPD07N60C3
Produktcode: 130437 		SP%28D%2CU%2907N60C3_Rev2.7_07-31-13.pdf Transistoren > MOSFET N-CH
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SPD07N60C3 SPD07N60C3 Hersteller : Infineon Technologies SP%28D%2CU%2907N60C3_Rev2.7_07-31-13.pdf Description: MOSFET N-CH 600V 7.3A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar