SPU02N60S5 Infineon Technologies
auf Bestellung 1382 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.33 EUR |
| 10+ | 2.99 EUR |
| 100+ | 2.32 EUR |
| 500+ | 1.92 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SPU02N60S5 Infineon Technologies
Description: SPU02N60 - 600V COOLMOS N-CHANNE, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 80µA, Supplier Device Package: PG-TO251-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V.
Weitere Produktangebote SPU02N60S5
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SPU02N60S5 |
 |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
|||
| SPU02N60S5 | Hersteller : Infineon Technologies |
Description: SPU02N60 - 600V COOLMOS N-CHANNE Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 80µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
Produkt ist nicht verfügbar |