SQ3427AEEV-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 5.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.46 EUR |
6000+ | 0.44 EUR |
9000+ | 0.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ3427AEEV-T1_GE3 Vishay Siliconix
Description: VISHAY - SQ3427AEEV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 5.3 A, 0.079 ohm, TSOP, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 5.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, MSL: MSL 3 - 168 Stunden, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2V, euEccn: NLR, Verlustleistung: 5W, Bauform - Transistor: TSOP, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchFET, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.079ohm, SVHC: No SVHC (10-Jun-2022).
Weitere Produktangebote SQ3427AEEV-T1_GE3 nach Preis ab 0.44 EUR bis 1.23 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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SQ3427AEEV-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 5.3A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 27992 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3427AEEV-T1_GE3 | Hersteller : Vishay Semiconductors | MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified |
auf Bestellung 620714 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3427AEEV-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ3427AEEV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 5.3 A, 0.079 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.079ohm SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 19490 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3427AEEV-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ3427AEEV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 5.3 A, 0.079 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.079ohm SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 19490 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3427AEEV-T1_GE3 | Hersteller : Vishay | Trans MOSFET P-CH 60V 5.3A Automotive 6-Pin TSOP T/R |
auf Bestellung 3170 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3427AEEV-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A Kind of package: reel; tape Pulsed drain current: -21A Power dissipation: 1.6W Gate charge: 22nC Polarisation: unipolar Technology: TrenchFET® Features of semiconductor devices: ESD protected gate Drain current: -5.3A Kind of channel: enhanced Drain-source voltage: -60V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: TSOP6 On-state resistance: 178mΩ Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQ3427AEEV-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A Kind of package: reel; tape Pulsed drain current: -21A Power dissipation: 1.6W Gate charge: 22nC Polarisation: unipolar Technology: TrenchFET® Features of semiconductor devices: ESD protected gate Drain current: -5.3A Kind of channel: enhanced Drain-source voltage: -60V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: TSOP6 On-state resistance: 178mΩ Mounting: SMD |
Produkt ist nicht verfügbar |