SQ4940AEY-T1_BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.66 EUR |
| 5000+ | 0.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ4940AEY-T1_BE3 Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V, Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote SQ4940AEY-T1_BE3 nach Preis ab 0.62 EUR bis 1.6 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQ4940AEY-T1_BE3 | Hersteller : Vishay Semiconductors |
MOSFET Dual N-CHANNEL 40 V |
auf Bestellung 60820 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SQ4940AEY-T1_BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 40V 8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 12378 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SQ4940AEY-T1_BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 8A Automotive AEC-Q101 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SQ4940AEY-T1_BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 8A Automotive AEC-Q101 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |