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SQD10N30-330H_GE3

SQD10N30-330H_GE3 Vishay Siliconix

sqd10n30-330h.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 300V 10A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1866 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.57 EUR
10+ 2.11 EUR
100+ 1.64 EUR
500+ 1.39 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 7
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Technische Details SQD10N30-330H_GE3 Vishay Siliconix

Description: MOSFET N-CH 300V 10A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V, Qualification: AEC-Q101.

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SQD10N30-330H_GE3 SQD10N30-330H_GE3 Hersteller : Vishay / Siliconix sqd10n30-330h.pdf MOSFET N Ch 300Vds 30Vgs AEC-Q101 Qualified
auf Bestellung 4623 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.59 EUR
10+ 2.13 EUR
100+ 1.65 EUR
500+ 1.4 EUR
1000+ 1.14 EUR
2000+ 1.07 EUR
4000+ 1.02 EUR
Mindestbestellmenge: 2
SQD10N30-330H_GE3 SQD10N30-330H_GE3 Hersteller : Vishay sqd10n30-330h.pdf Trans MOSFET N-CH 300V 10A Automotive 3-Pin(2+Tab) TO-252AA
Produkt ist nicht verfügbar
SQD10N30-330H_GE3 SQD10N30-330H_GE3 Hersteller : Vishay Siliconix sqd10n30-330h.pdf Description: MOSFET N-CH 300V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar