STP12N65M2 STMicroelectronics
Hersteller: STMicroelectronicsMOSFET N-channel 650 V, 0.42 Ohm typ 8 A MDmesh M2 Power MOSFET in TO-220 package
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.63 EUR |
| 100+ | 2.8 EUR |
| 500+ | 2.31 EUR |
| 1000+ | 1.6 EUR |
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Technische Details STP12N65M2 STMicroelectronics
Description: POWER MOSFET, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| STP12N65M2 | Hersteller : STMicroelectronics |
Description: POWER MOSFET Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V |
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