auf Bestellung 496 Stücke:
Lieferzeit 642-646 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.89 EUR |
| 10+ | 3.48 EUR |
| 100+ | 2.82 EUR |
| 500+ | 2.32 EUR |
| 1000+ | 1.9 EUR |
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Technische Details SUP40012EL-GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 150A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 1.79mOhm @ 30A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10930 pF @ 20 V.
Weitere Produktangebote SUP40012EL-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SUP40012EL-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SUP40012EL-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SUP40012EL-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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| SUP40012EL-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 150A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 300A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.36mΩ Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP40012EL-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 150A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.79mOhm @ 30A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10930 pF @ 20 V |
Produkt ist nicht verfügbar |
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| SUP40012EL-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 150A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 300A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.36mΩ Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |