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T2N7002AK,LM(T

T2N7002AK,LM(T TOSHIBA


T2N7002AK.pdf Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.76A
Power dissipation: 0.32W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 30000 Stücke
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Technische Details T2N7002AK,LM(T TOSHIBA

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.2A, Pulsed drain current: 0.76A, Power dissipation: 0.32W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 3.2Ω, Mounting: SMD, Gate charge: 0.35nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 30000 Stücke.

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T2N7002AK,LM(T T2N7002AK,LM(T Hersteller : TOSHIBA T2N7002AK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.76A
Power dissipation: 0.32W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar