Technische Details TDB6HK180N22RRPB11BPSA1 Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode, Current - Gate Trigger (Igt) (Max): 70 mA, Number of SCRs, Diodes: 3 SCRs, 3 Diodes, Voltage - Gate Trigger (Vgt) (Max): 1.5 V, Voltage - Off State: 2.2 kV.
Weitere Produktangebote TDB6HK180N22RRPB11BPSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| TDB6HK180N22RRPB11BPSA1 | Hersteller : Infineon Technologies |
 2200V half controlled bridge with brake chopper |
Produkt ist nicht verfügbar |
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| TDB6HK180N22RRPB11BPSA1 | Hersteller : Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2B-411 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Current - Gate Trigger (Igt) (Max): 70 mA Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - Off State: 2.2 kV |
Produkt ist nicht verfügbar |
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| TDB6HK180N22RRPB11BPSA1 | Hersteller : Infineon Technologies |
Discrete Semiconductor Modules LOW POWER ECONO |
Produkt ist nicht verfügbar |