auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.96 EUR |
10+ | 16.77 EUR |
25+ | 15.56 EUR |
100+ | 13.97 EUR |
250+ | 13.31 EUR |
500+ | 12.34 EUR |
1000+ | 11.11 EUR |
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Technische Details TK040Z65Z,S1F Toshiba
Description: MOSFET N-CH 650V 57A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.85mA, Supplier Device Package: TO-247-4L(T), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V.
Weitere Produktangebote TK040Z65Z,S1F nach Preis ab 21.88 EUR bis 21.88 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TK040Z65Z,S1F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 57A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.85mA Supplier Device Package: TO-247-4L(T) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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