auf Bestellung 496 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.27 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 0.94 EUR |
| 5000+ | 0.91 EUR |
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Technische Details TK22E10N1,S1X Toshiba
Description: MOSFET N CH 100V 52A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V, Power Dissipation (Max): 72W (Tc), Vgs(th) (Max) @ Id: 4V @ 300µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V.
Weitere Produktangebote TK22E10N1,S1X nach Preis ab 1.45 EUR bis 2.29 EUR
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TK22E10N1,S1X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N CH 100V 52A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 300µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V |
auf Bestellung 131 Stücke: Lieferzeit 10-14 Tag (e) |
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