auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.64 EUR |
| 10+ | 7.39 EUR |
| 50+ | 6.05 EUR |
| 100+ | 5.19 EUR |
| 250+ | 5.07 EUR |
| 500+ | 4.61 EUR |
| 1000+ | 3.82 EUR |
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Technische Details TK28A65W,S5X Toshiba
Description: MOSFET N-CH 650V 27.6A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.6mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V.
Weitere Produktangebote TK28A65W,S5X nach Preis ab 5.23 EUR bis 7.69 EUR
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TK28A65W,S5X | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 27.6A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.6mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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