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TK290P60Y,RQ

TK290P60Y,RQ Toshiba Semiconductor and Storage

TK290P60Y_datasheet_en_20161115.pdf?did=55272&prodName=TK290P60Y Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+1.2 EUR
Mindestbestellmenge: 2000
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Technische Details TK290P60Y,RQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 600V 11.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 450µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V.

Weitere Produktangebote TK290P60Y,RQ nach Preis ab 1.19 EUR bis 2.66 EUR

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TK290P60Y,RQ TK290P60Y,RQ Hersteller : Toshiba TK290P60Y_datasheet_en_20161115-1115865.pdf MOSFET N-Ch DTMOSV 650V 100W 730pF 11.5A
auf Bestellung 1251 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.99 EUR
10+ 1.76 EUR
100+ 1.57 EUR
250+ 1.56 EUR
500+ 1.44 EUR
1000+ 1.25 EUR
2000+ 1.19 EUR
Mindestbestellmenge: 2
TK290P60Y,RQ TK290P60Y,RQ Hersteller : Toshiba Semiconductor and Storage TK290P60Y_datasheet_en_20161115.pdf?did=55272&prodName=TK290P60Y Description: MOSFET N-CH 600V 11.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.66 EUR
10+ 2.2 EUR
100+ 1.75 EUR
500+ 1.48 EUR
1000+ 1.26 EUR
Mindestbestellmenge: 7