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TK5A60W,S4VX

TK5A60W,S4VX Toshiba


TK5A60W_datasheet_en_20140105-1131742.pdf Hersteller: Toshiba
MOSFET N-Ch 9.7A 100W FET 600V 380pF 20nC
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Technische Details TK5A60W,S4VX Toshiba

Description: MOSFET N-CH 600V 5.4A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 270µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V.

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TK5A60W,S4VX TK5A60W,S4VX Hersteller : Toshiba 25tk5a60w_en_datasheet.pdf Trans MOSFET N-CH Si 600V 5.4A 3-Pin(3+Tab) TO-220SIS Magazine
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TK5A60W,S4VX TK5A60W,S4VX Hersteller : Toshiba 25tk5a60w_en_datasheet.pdf Trans MOSFET N-CH Si 600V 5.4A 3-Pin(3+Tab) TO-220SIS Magazine
Produkt ist nicht verfügbar
TK5A60W,S4VX TK5A60W,S4VX Hersteller : Toshiba Semiconductor and Storage Description: MOSFET N-CH 600V 5.4A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 270µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Produkt ist nicht verfügbar