Technische Details TK65S04N1L,LQ(O Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 65A, Power dissipation: 107W, Case: DPAK, Gate-source voltage: ±20V, On-state resistance: 7.8mΩ, Mounting: SMD, Gate charge: 39nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 2000 Stücke.
Weitere Produktangebote TK65S04N1L,LQ(O
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TK65S04N1L,LQ(O | Hersteller : TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 65A Power dissipation: 107W Case: DPAK Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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TK65S04N1L,LQ(O | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 107W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 65A Power dissipation: 107W Case: DPAK Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |