Technische Details TK6P65W,RQ(S Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 60W; DPAK, Type of transistor: N-MOSFET, Power dissipation: 60W, Polarisation: unipolar, Gate charge: 11nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 23.2A, Mounting: SMD, Case: DPAK, Drain-source voltage: 650V, Drain current: 5.8A, On-state resistance: 0.89Ω, Anzahl je Verpackung: 2000 Stücke.
Weitere Produktangebote TK6P65W,RQ(S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| TK6P65W,RQ(S | Hersteller : TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 60W; DPAK Type of transistor: N-MOSFET Power dissipation: 60W Polarisation: unipolar Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 23.2A Mounting: SMD Case: DPAK Drain-source voltage: 650V Drain current: 5.8A On-state resistance: 0.89Ω Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| TK6P65W,RQ(S | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5.8A; Idm: 23.2A; 60W; DPAK Type of transistor: N-MOSFET Power dissipation: 60W Polarisation: unipolar Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 23.2A Mounting: SMD Case: DPAK Drain-source voltage: 650V Drain current: 5.8A On-state resistance: 0.89Ω |
Produkt ist nicht verfügbar |