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TK6P65W,RQ

TK6P65W,RQ Toshiba

TK6P65W_datasheet_en_20151225-1916290.pdf Hersteller: Toshiba
MOSFET Power MOSFET N-Channel
auf Bestellung 7670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.15 EUR
10+ 1.75 EUR
100+ 1.36 EUR
500+ 1.15 EUR
1000+ 0.94 EUR
2000+ 0.88 EUR
4000+ 0.86 EUR
Mindestbestellmenge: 2
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Technische Details TK6P65W,RQ Toshiba

Description: MOSFET N-CH 650V 5.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 180µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V.

Weitere Produktangebote TK6P65W,RQ nach Preis ab 0.95 EUR bis 2.16 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TK6P65W,RQ TK6P65W,RQ Hersteller : Toshiba Semiconductor and Storage Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 2008 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.16 EUR
10+ 1.76 EUR
100+ 1.37 EUR
500+ 1.16 EUR
1000+ 0.95 EUR
Mindestbestellmenge: 9
TK6P65W,RQ TK6P65W,RQ Hersteller : Toshiba 6821docget.jspdid15571prodnametk6p65w.jspdid15571prodnametk6p65w.pdf Trans MOSFET N-CH Si 650V 5.8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
TK6P65W,RQ TK6P65W,RQ Hersteller : Toshiba Semiconductor and Storage Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Produkt ist nicht verfügbar