TK6Q60W,S1VQ(S Toshiba

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 24.8A; 60W; IPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 6.2A, Pulsed drain current: 24.8A, Power dissipation: 60W, Case: IPAK, Gate-source voltage: ±30V, On-state resistance: 0.68Ω, Mounting: THT, Gate charge: 12nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.