TP2104N3-G-P003 Microchip Technology
auf Bestellung 2494 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.46 EUR |
| 25+ | 1.23 EUR |
| 100+ | 1.11 EUR |
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Technische Details TP2104N3-G-P003 Microchip Technology
Description: MOSFET P-CH 40V 175MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 175mA (Tj), Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.
Weitere Produktangebote TP2104N3-G-P003 nach Preis ab 1.12 EUR bis 1.46 EUR
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TP2104N3-G-P003 | Hersteller : Microchip Technology |
 Description: MOSFET P-CH 40V 175MA TO92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
auf Bestellung 2551 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2104N3-G-P003 | Hersteller : Microchip Technology |
Description: MOSFET P-CH 40V 175MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 175mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| TP2104N3-G-P003 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -175mA; Idm: -1A; 740mW; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -175mA Pulsed drain current: -1A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| TP2104N3-G-P003 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -175mA; Idm: -1A; 740mW; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -175mA Pulsed drain current: -1A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |