TP2520N8-G Microchip Technology
auf Bestellung 3750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
250+ | 2.17 EUR |
500+ | 1.98 EUR |
2000+ | 1.87 EUR |
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Technische Details TP2520N8-G Microchip Technology
Description: MOSFET P-CH 200V 260MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 260mA (Tj), Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-243AA (SOT-89), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V.
Weitere Produktangebote TP2520N8-G nach Preis ab 1.9 EUR bis 2.78 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TP2520N8-G | Hersteller : Microchip Technology |
Description: MOSFET P-CH 200V 260MA TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
auf Bestellung 1892 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2520N8-G | Hersteller : Microchip Technology | MOSFET 200V 12Ohm |
auf Bestellung 5515 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2520N8-G | Hersteller : Microchip Technology | Trans MOSFET P-CH Si 200V 0.26A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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TP2520N8-G | Hersteller : Microchip Technology | Trans MOSFET P-CH Si 200V 0.26A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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TP2520N8-G | Hersteller : Microchip Technology | Trans MOSFET P-CH Si 200V 0.26A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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TP2520N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -0.75A; 1.6W; SOT89-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Pulsed drain current: -0.75A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TP2520N8-G | Hersteller : Microchip Technology |
Description: MOSFET P-CH 200V 260MA TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
Produkt ist nicht verfügbar |
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TP2520N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -0.75A; 1.6W; SOT89-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Pulsed drain current: -0.75A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |