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TP44100SG

TP44100SG Tagore Technology

TP44100SG-Rev1.2.pdf Hersteller: Tagore Technology
Description: GAN FET HEMT 650V .118OHM 22QFN
Packaging: Cut Tape (CT)
Package / Case: 22-PowerVFQFN
Mounting Type: Surface Mount
Configuration: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 118mOhm @ 500mA, 6V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 22-QFN (5x7)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 6V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Voltage - Rated: 650 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 400 V
auf Bestellung 2979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+8.82 EUR
10+ 7.62 EUR
100+ 6.63 EUR
500+ 5.3 EUR
Mindestbestellmenge: 2
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Technische Details TP44100SG Tagore Technology

Description: GAN FET HEMT 650V .118OHM 22QFN, Packaging: Tape & Reel (TR), Package / Case: 22-PowerVFQFN, Mounting Type: Surface Mount, Configuration: P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 118mOhm @ 500mA, 6V, Vgs(th) (Max) @ Id: 2.5V @ 11mA, Supplier Device Package: 22-QFN (5x7), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, 6V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Voltage - Rated: 650 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 400 V.

Weitere Produktangebote TP44100SG nach Preis ab 10.05 EUR bis 10.05 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TP44100SG Hersteller : Tagore Technology TP44100SG-Rev1.2.pdf TP44100SG
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
16+10.05 EUR
Mindestbestellmenge: 16
TP44100SG TP44100SG Hersteller : Tagore Technology TP44100SG-Rev1.2.pdf Description: GAN FET HEMT 650V .118OHM 22QFN
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVFQFN
Mounting Type: Surface Mount
Configuration: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 118mOhm @ 500mA, 6V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 22-QFN (5x7)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 6V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Voltage - Rated: 650 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 400 V
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