auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 29.09 EUR |
10+ | 26.73 EUR |
120+ | 23.06 EUR |
510+ | 20.08 EUR |
1020+ | 19.15 EUR |
2520+ | 18.67 EUR |
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Technische Details TP65H050WS Transphorm
Description: GANFET N-CH 650V 34A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V, Power Dissipation (Max): 119W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 700µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V.
Weitere Produktangebote TP65H050WS nach Preis ab 22.18 EUR bis 29.11 EUR
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TP65H050WS | Hersteller : Transphorm |
Description: GANFET N-CH 650V 34A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 700µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V |
auf Bestellung 315 Stücke: Lieferzeit 10-14 Tag (e) |
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