Produkte > TRANSPHORM > TP65H070G4RS-TR
TP65H070G4RS-TR

TP65H070G4RS-TR Transphorm

tp65h070g4rs_1v3_1-3395631.pdf Hersteller: Transphorm
MOSFET GaN FET 650 V 29A TOLT
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+14.47 EUR
10+ 12.41 EUR
25+ 11.25 EUR
100+ 10.33 EUR
250+ 9.72 EUR
500+ 9.12 EUR
1000+ 8.2 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details TP65H070G4RS-TR Transphorm

Description: 650 V 29 A GAN FET, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 700µA, Supplier Device Package: TOLT, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V.

Weitere Produktangebote TP65H070G4RS-TR nach Preis ab 8.27 EUR bis 14.59 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TP65H070G4RS-TR TP65H070G4RS-TR Hersteller : Transphorm datasheet-tp65h070g4rs Description: 650 V 29 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLT
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.59 EUR
10+ 12.49 EUR
100+ 10.41 EUR
500+ 9.19 EUR
1000+ 8.27 EUR
Mindestbestellmenge: 2
TP65H070G4RS-TR TP65H070G4RS-TR Hersteller : Transphorm datasheet-tp65h070g4rs Description: 650 V 29 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLT
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
Produkt ist nicht verfügbar