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TPH2R104PL,LQ

TPH2R104PL,LQ Toshiba Semiconductor and Storage

TPH2R104PL_datasheet_en_20160617.pdf?did=53315&prodName=TPH2R104PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.75 EUR
Mindestbestellmenge: 3000
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Technische Details TPH2R104PL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 100A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V, Power Dissipation (Max): 830mW (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V.

Weitere Produktangebote TPH2R104PL,LQ nach Preis ab 0.71 EUR bis 1.81 EUR

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TPH2R104PL,LQ TPH2R104PL,LQ Hersteller : Toshiba TPH2R104PL_datasheet_en_20160617-1916446.pdf MOSFET POWER MOSFET TRANSISTOR
auf Bestellung 52160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.78 EUR
10+ 1.46 EUR
100+ 1.13 EUR
500+ 0.96 EUR
1000+ 0.78 EUR
3000+ 0.74 EUR
6000+ 0.71 EUR
Mindestbestellmenge: 2
TPH2R104PL,LQ TPH2R104PL,LQ Hersteller : Toshiba Semiconductor and Storage TPH2R104PL_datasheet_en_20160617.pdf?did=53315&prodName=TPH2R104PL Description: MOSFET N-CH 40V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V
auf Bestellung 11608 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.81 EUR
12+ 1.49 EUR
100+ 1.16 EUR
500+ 0.98 EUR
1000+ 0.8 EUR
Mindestbestellmenge: 10