TPH3R506PL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 94A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 94A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 47A, 10V, Power Dissipation (Max): 830mW (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V.